Products
Huatai
Huatai's RF LDMOS product line covers a variety of applications such as mobile communication base stations, handheld communications, aerospace, industrial equipment and instruments, and has formed from low frequency (100MHz) to high frequency (3GHz), from low power (2W) to high power ( 1600W), from low voltage (7V) to high voltage (50V), a complete product line with high efficiency and good reliability, which can meet the application of most of China's radar, communication base stations, aerospace, industrial equipment and instruments Claim.
Product Details
Communication base station
Huatai RF LDMOS products are widely used in the fields of mobile communication base stations and repeaters, breaking the monopoly position of power tubes of foreign companies, and improving the competitiveness of core products in the communications field in China and the integrity and security of the industrial chain. Huatai's research and development of GSM 900MHz 140W products, TDD-LTE 1880MHz-2025MHz 120W, 700MHz-2700MHz 10W and other products have been mass-produced by international first-line communication equipment companies, and their performance is comparable to their international counterparts, achieving the domestic breakthrough of RF LDMOS in the field of communication base stations .
| Communication base station - discrete device | |||||||||
| Part Num. | Freq （MHz） | VDD (V) | P1dB (dBm) | Gain (dB) | Pavg (dBm) | Test Freq (MHz) | 目標(biāo)應(yīng)用 | Package | Process |
| HTA50P3 | 1800-5000 | 5 | 24 | 29 | 14 | 2600 | 寬帶驅(qū)動(dòng),5G微站，天線系統(tǒng) | QFN3×3 | GaAs |
| HTN8G38S004P | 700-3800 | 28 | 36 | 19 | 25 | 2600 | 便攜設(shè)備，5G微站 | DFN3×3 | LDMOS |
| HTN7G38S007P | 700-3800 | 28 | 38 | 14.2 | 28 | 3400 | 便攜設(shè)備，5G微站 | PDFN5×5 | LDMOS |
| HTN8G27S015P | 700-2700 | 28 | 41 | 20 | 30 | 2600 | 便攜設(shè)備，5G微站 | DFN5×5 | LDMOS |
| HTN8G36S015P | 3300-4200 | 28 | 41 | 17 | 30 | 3500 | 便攜設(shè)備，5G微站 | DFN5×5 | LDMOS |
| HTN8G27S010P | 700-2700 | 28 | 40 | 18 | 29 | 2140 | MDAS，直放站驅(qū)動(dòng) | PDFN6×5 | LDMOS |
| HTN8G27S020PG | 700-2700 | 28 | 44 | 19 | 34 | 2140 | MDAS，5G驅(qū)動(dòng) | TO270 | LDMOS |
| HTN7G21S040PG | 700-2100 | 28 | 46 | 16.1 | 36 | 1840 | 直放站28V/北斗12V | TO270 | LDMOS |
| HTN8G27P040P | 2500-2700 | 28 | 46 | 20 | 37 | 2600 | 64T MIMO，5G驅(qū)動(dòng) | DFN7.5×5 | LDMOS |
| HTN7G09S060P | 700~960 | 28 | 49 | 21.8 | 39 | 940 | GSM干放，專網(wǎng) | TO270 | LDMOS |
| HTN7G09S120P | 700~960 | 28 | 50 | 22.1 | 40.5 | 881 | 電子圍欄，直放站 | TO270 | LDMOS |
| HTH1D27P110H | 2500-2700 | 48 | 50.8(P5) | 16 | 41.4 | 2600 | 32T MIMO，驅(qū)動(dòng) | DFN7×6.5 | GaN |
| HTH1D36P120H | 3400-3600 | 48 | 51(P3) | 14 | 41.4 | 3500 | 32T MIMO，驅(qū)動(dòng) | DFN7×6.5 | GaN |
| HTH8G09P350H | 700-821 | 48 | 55.7(P3) | 22 | 47.3 | 778 | 30W/40W基站 | H2110S-4L | LDMOS |
| HTH9G09P550S | 700-960 | 48 | 57.4(P5) | 20 | 49.5 | 942 | 60W基站 | ACS2110S-4L | LDMOS |
| HTH1D27P550S | 2500-2700 | 48 | 57.2(P5) | 15 | 47.4 | 2600 | 30W/40W基站 | ACC2110S-4L | GaN |
| HTH1D36P450H | 3400-3600 | 48 | 56.2(P5) | 14 | 47.4 | 3500 | 30W/40W基站 | ACC2110S-4L | GaN |
| HTH1D09P700S | 758-960 | 48 | 58.6(P5) | 19 | 50.5 | 803 | 80W基站 | ACS2110S-4L | GaN |
| HTH1D22P360S | 1805-2170 | 48 | 56.1(P5) | 16 | 48 | 1840 | 40/60W基站 | H2110S-4L | LDMOS |
| HTN7G21P160H | 1805~2170 | 28 | 52 | 16.7 | 44.8 | 1960 | 電子圍欄，光纖直放站 | H2110S-6L | LDMOS |
| 5G Small base station-MMIC | |||||||||
| Part Num. | Freq （MHz） | VDD (V) | Gain (min) dB | Pavg (dBm) | P-3(min) dBm | Eff(typical) | 目標(biāo)應(yīng)用 | Package | Process |
| H8G0708M06P | 728-821 | 28 | 19 | 28 | 37.3 | 45 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G0810M06P | 869-960 | 28 | 19 | 28 | 37.3 | 45 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G1819M10P | 1805-1880 | 28 | 27 | 31 | 40.5 | 43 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G2022M10P | 2110-2170 | 28 | 27 | 31 | 40.5 | 43 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G2324M10P | 2300-2400 | 28 | 27 | 31 | 40 | 41 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G2527M10P | 2500-2700 | 28 | 27 | 31 | 40 | 39 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G3336M12P | 3300-3600 | 28 | 33 | 32 | 41.5 | 33 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H8G3540M12P | 3600-3800 | 28 | 33 | 32 | 41 | 32 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H9G4750M12P | 4700-5000 | 28 | 30 | 32 | 41 | 28 | 寬帶驅(qū)動(dòng),5G小基站 | LGA7×7 | LDMOS |
| H9G1822M60P | 1805-2170 | 28 | 28.2 | 35 | 48 | 29 | 寬帶驅(qū)動(dòng)，mMIMO | OMP400-8 | LDMOS |
| H8G1822M100P | 1805-2170 | 28 | 26.2 | 38 | 49.7 | 25 | 寬帶驅(qū)動(dòng)，mMIMO | OMP780-16 | LDMOS |
| Mobile radio | |||||||||
| Part Num. | Min. Freq （MHz） | Max. Freq （MHz） | VDD (V) | Eff(typical) | Gain (dB) | Psat （W） | 目標(biāo)應(yīng)用 | Package | Process |
| HTU7G06S0P5P | 100 | 1000 | 3.6/7.2 | 70/73 | 10/14 | 0.7/1.5 | 0.5W機(jī)，5W/10W機(jī)推動(dòng) | SOT89 | LDMOS |
| HTU7G06S0P6P | 100 | 1000 | 3.6/7.2 | 67/67 | 10/14 | 0.7/1.5 | 2W/5W機(jī)推動(dòng) | SOT23 | LDMOS |
| HTU7G06S002P | 100 | 1000 | 3.6 | 61 | 14 | 2.6 | 2W機(jī) | SOT89 | LDMOS |
| HTU7G06S004P | 100 | 1000 | 3.6 | 60 | 12 | 4 | 3W機(jī) | PDFN3×3 | LDMOS |
| HTU7G06S005P | 100 | 1000 | 3.6 | 65 | 11 | 5 | 3W機(jī) | PDFN5×5 | LDMOS |
| HTL7G06S006P | 100 | 1000 | 7.2 | 61 | 13 | 6 | 5W機(jī) | SOT89 | LDMOS |
| HTU7G06S007P | 100 | 1000 | 3.6 | 65 | 10 | 7 | 單電池5W機(jī) | PDFN5×5 | LDMOS |
| HTL7G06S009P | 100 | 1000 | 7.2/8.4 | 60 | 12 | 8/9 | 7W模擬機(jī)，4W數(shù)字機(jī) | SOT89 | LDMOS |
| HTL7G06S011P | 100 | 1000 | 3.6/7.2 | 60/60 | 10/12 | 5/11 | 單電池3W/雙電池10W機(jī) | PDFN5×5 | LDMOS |
| HTM7G06S035P | 100 | 1000 | 12.5/24 | 61 | 15/20 | 38/100 | 車臺(tái)，軍工電臺(tái)，應(yīng)急廣播 | TO-270 | LDMOS |
| ISM&Industrial medical treatment | |||||||||
| 產(chǎn)品型號(hào) | 工作頻率 (MHz) | 工作電壓 (V) | Psat （W） | DE （%） | Gain (dB) | Test Freq (MHz) | 目標(biāo)應(yīng)用 | Package | Process |
| HT647P | 600-1600 | 28 | 200 | 59 | 19.7 | CW@1350 | 寬帶專網(wǎng)，軍用 | ACC2110S-4L | LDMOS |
| HT647PL | 30-512 | 28 | 200 | 67.9 | 23.3 | CW@450 | 寬帶專網(wǎng)，軍用 | ACC2110S-4L | LDMOS |
| HTH7G14S150H(B) | 1.8-1400 | 50 | 158 | 56 | 21.5 | Pulse@860 | 廣播，直放站 | H0906 | LDMOS |
| HTH7G06P300H(B) | 1.8-600 | 50 | 430 | 64 | 20.8 | Pulse@435 | 廣播，雷達(dá)，通信 | ACC2110S-4L | LDMOS |
| HTH8G07P400H(B) | 100-700 | 50 | 400 | 60 | 20 | Pulse@600 | 寬帶專網(wǎng)，廣播，雷達(dá) | ACC2110S-4L | LDMOS |
| HTH7G14S030H(B) | 1.8-1400 | 50 | 30 | 61 | 18 | Pulse@1200 | 寬帶專網(wǎng)，廣播，雷達(dá) | H0906 | LDMOS |
| HTH7G06P500H(B) | 1.8-600 | 50 | 550 | 60 | 24.6 | Pulse@435 | 廣播，雷達(dá)，通信 | ACC2110S-4L | LDMOS |
| HTH8G07P600H(B) | 470-700 | 50 | 600 | 63 | 22 | Pulse@600 | 工業(yè)，醫(yī)療，雷達(dá) | ACC2110S-4L | LDMOS |
| HTH8G07P1K0H(B) | 470-700 | 50 | 1000 | 60 | 16.5 | Pulse@600 | DVB-T，廣播 | ACC3210S-4L | LDMOS |
| HTH8G07P1K4H(B) | 1.8-200 | 50 | 1400 | 70 | 27 | CW@60 | DVB-T，廣播 | ACC3210S-4L | LDMOS |
| HTH8G02P350H(B) | 1.8-200 | 50 | 350 | 70 | 25 | CW@160 | 寬帶專網(wǎng)，廣播 | ACS2110B-4L | LDMOS |
| HTH8G02P550H(B) | 1.8-200 | 50 | 550 | 70 | 25 | Pulse@100 | 寬帶專網(wǎng)，廣播，工業(yè)醫(yī)療 | ACS2110B-4L | LDMOS |
| RF energy | |||||||||
| 產(chǎn)品型號(hào) | 工作頻率 (MHz) | 工作電壓 (V) | P-1dB （W） | DE （%） | Gain (dB) | Test Freq (MHz) | 目標(biāo)應(yīng)用 | Package | Process |
| HT20340S | 10-200 | 50 | 400 | 72 | 25 | CW@ 40 | 射頻能量，工業(yè) | TO247 | LDMOS |
| HTH9G09P700H(B) | 600-950 | 40 | 700 | 68 | 18 | Pulse@800 | 射頻能量，工業(yè) | ACC3210S-4L | LDMOS |
For more information or to order products, please contact Xiamen Hejiaxing Sales Office.
Mobile: +86-13600975566
WeChat：13600975566
QQ: 2355620732
Mail：[email protected]
- Case
- Repeater / Fence HPA
- MDAS
- 4G Small base station
- RFID
- Microchamber system
- Digital broadcasting
- Beidou Active System
- Shield system
- Handheld
- Tower Amplification
- Antenna board
- 5G small base station 100MW
- 5G small base station rollback
- 5G small base station DPD
- 4G+5G small base station
- V2X
- Gain Compensator
- GPS antenan
- Multi-Phase Positioning Navigation Antenna
Enterprise email:[email protected]、[email protected]
Mobile:13906049004(WeChat)
Xiamen Hejiaxing Electronics Co., Ltd. 閩ICP備05007801號(hào)-1
